Programmable resistive memory cell with self-forming gap

Invention Grant

US07879692B2 Programmable resistive memory cell with self-forming gap 有权

Title translation: 具有自形成间隙的可编程电阻存储单元

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Patent Title: Programmable resistive memory cell with self-forming gap
Patent Title (中): 具有自形成间隙的可编程电阻存储单元
Application No.: US12576099

Application Date: 2009-10-08
Publication No.: US07879692B2

Publication Date: 2011-02-01
Inventor: Hsiang-Lan Lung
Applicant: Hsiang-Lan Lung
Applicant Address: TW Hsinchu
Assignee: Macronix International Co., Ltd.
Current Assignee: Macronix International Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Haynes Beffel & Wolfeld LLP
Main IPC: H01L21/326
IPC: H01L21/326

Programmable resistive memory cell with self-forming gap

Abstract:

A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

Abstract(Chinese):

存储器件具有第一电极，第二电极和限定第一电极和第二电极之间的电极间电流路径的存储材料。存储材料与存储材料旁边的可收缩材料之间的可收缩材料的收缩形成间隙。

Public/Granted literature

US20100029062A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP Public/Granted day:2010-02-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/326	.....电流或电场的应用，例如用于电铸成型的（H01L21/20至H01L21/288，H01L21/302至H01L21/324优先）