Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US11474499Application Date: 2006-06-26
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Publication No.: US07879701B2Publication Date: 2011-02-01
- Inventor: Junichi Koezuka , Hiroshi Ohki , Taku Hasegawa , Mami Goto
- Applicant: Junichi Koezuka , Hiroshi Ohki , Taku Hasegawa , Mami Goto
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2005-191532 20050630
- Main IPC: H01L21/425
- IPC: H01L21/425

Abstract:
Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.
Public/Granted literature
- US20070023700A1 Manufacturing method of semiconductor device Public/Granted day:2007-02-01
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