A semiconductor device and a method for manufacturing the device that minimizes a line width while maximizing integration density of the semiconductor device. The method includes forming an interlayer insulating film on a semiconductor substrate, and then forming a first via hole in the interlayer insulating film, and then forming a resin material in the first via hole, and then forming a plurality of second via holes in the interlayer insulating film laterally, and then forming a resin material in the second via holes, and then simultaneously forming a plurality of third via holes in the interlayer insulating film and a trench spatially above and corresponding to the first via hole, and then removing the resin formed in the first via hole and the second via holes, and then simultaneously forming metal layers in the first via hole and the second and third via holes and the trench.