Invention Grant
US07879736B2 Composition for etching silicon oxide and method of forming a contact hole using the same
有权
用于蚀刻氧化硅的组合物和使用其形成接触孔的方法
- Patent Title: Composition for etching silicon oxide and method of forming a contact hole using the same
- Patent Title (中): 用于蚀刻氧化硅的组合物和使用其形成接触孔的方法
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Application No.: US11771896Application Date: 2007-06-29
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Publication No.: US07879736B2Publication Date: 2011-02-01
- Inventor: Dong-Won Hwang , Kook-Joo Kim , Jung-In La , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
- Applicant: Dong-Won Hwang , Kook-Joo Kim , Jung-In La , Pil-Kwon Jun , Seung-Ki Chae , Yang-Koo Lee
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Cheil Industries, Inc.
- Current Assignee: Samsung Electronics Co., Ltd.,Cheil Industries, Inc.
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0059054 20060629
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
Public/Granted literature
- US20080121622A1 COMPOSITION FOR ETCHING SILICON OXIDE AND METHOD OF FORMING A CONTACT HOLE USING THE SAME Public/Granted day:2008-05-29
Information query
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