Invention Grant
US07879740B2 Ferrocene-containing conductive polymer, organic memory device using the same and fabrication method of the organic memory device
失效
含二茂铁的导电聚合物，使用其的有机存储器件和有机存储器件的制造方法
- Patent Title: Ferrocene-containing conductive polymer, organic memory device using the same and fabrication method of the organic memory device
- Patent Title (中): 含二茂铁的导电聚合物，使用其的有机存储器件和有机存储器件的制造方法
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Application No.: US11790757Application Date: 2007-04-27
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Publication No.: US07879740B2Publication Date: 2011-02-01
- Inventor: Kwang Hee Lee , Tae Llm Choi , Sang Kyun Lee
- Applicant: Kwang Hee Lee , Tae Llm Choi , Sang Kyun Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0111777 20061113
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Disclosed are a ferrocene-containing conductive polymer, an organic memory device using the conductive polymer and a method for fabricating the organic memory device. The conductive polymer may include a fluorenyl repeating unit, a thienyl repeating unit and a diarylferrocenyl repeating unit. The organic memory device may possess the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.
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