A stripping agent composition for a resist, containing (A) 0.1 to 10% by weight of an amine; (B) 80 to 99% by weight of an organic solvent having a Hansen's solubility parameter of from 18 to 33 MPa1/2; (C) 0.01 to 3% by weight of a sugar; and (D) 0 to 5% by weight of water; a method for stripping a resist, including the step of stripping the resist with the stripping agent composition; and a method for manufacturing a semiconductor device, including the step of stripping a resist with the stripping agent composition. By using the stripping composition of the present invention, for example, a high-quality IC or LSI semiconductor device circuit, especially a compound semiconductor device circuit can be more economically advantageously manufactured.