Invention Grant
- Patent Title: Quantum device, control method thereof and manufacturing method thereof
- Patent Title (中): 量子装置及其控制方法及其制造方法
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Application No.: US11898116Application Date: 2007-09-10
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Publication No.: US07880162B2Publication Date: 2011-02-01
- Inventor: Haizhi Song
- Applicant: Haizhi Song
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00
Abstract:
A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is formed on the barrier layer (28). Then, a cap layer (34) covering the quantum dot (30) and the like is formed.
Public/Granted literature
- US20080012003A1 Quantum device, control method thereof and manufacturing method thereof Public/Granted day:2008-01-17
Information query
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