Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US12081354Application Date: 2008-04-15
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Publication No.: US07880178B2Publication Date: 2011-02-01
- Inventor: Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
- Applicant: Rintaro Koda , Takahiro Arakida , Yuji Masui , Tomoyuki Oki
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2007-110512 20070419
- Main IPC: H01L31/12
- IPC: H01L31/12

Abstract:
The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.
Public/Granted literature
- US20090001386A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-01-01
Information query
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