Invention Grant
US07880186B2 III-nitride light emitting device with double heterostructure light emitting region
有权
具有双异质结构发光区域的III族氮化物发光器件
- Patent Title: III-nitride light emitting device with double heterostructure light emitting region
- Patent Title (中): 具有双异质结构发光区域的III族氮化物发光器件
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Application No.: US11682276Application Date: 2007-03-05
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Publication No.: US07880186B2Publication Date: 2011-02-01
- Inventor: Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
- Applicant: Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
- Applicant Address: NL Eindhoven US CA San Jose
- Assignee: Koninklijke Phllips Electronics N.V.,Phillips Lumileds Lighting Company, LLC
- Current Assignee: Koninklijke Phllips Electronics N.V.,Phillips Lumileds Lighting Company, LLC
- Current Assignee Address: NL Eindhoven US CA San Jose
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
Public/Granted literature
- US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region Public/Granted day:2007-06-28
Information query
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