Invention Grant
- Patent Title: Semiconductor light emitting device having narrow radiation spectrum
- Patent Title (中): 具有窄辐射光谱的半导体发光器件
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Application No.: US11241310Application Date: 2005-09-30
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Publication No.: US07880187B2Publication Date: 2011-02-01
- Inventor: Ken Sasakura , Keizo Kawaguchi , Hanako Ono
- Applicant: Ken Sasakura , Keizo Kawaguchi , Hanako Ono
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, P.C.
- Priority: JP2004-292326 20041005
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L33/00

Abstract:
Radiation occurs when current is injected into an active layer from electrodes. A pair of clad layers is disposed sandwiching the active layer, the clad layer having a band gap wider than a band gap of the active layer. An optical absorption layer is disposed outside at least one clad layer of the pair of clad layers. The optical absorption layer has a band gap wider than the band gap of the active layer and narrower than the band gap of the clad layer. A spread of a spectrum of radiated light can be narrowed.
Public/Granted literature
- US20060071232A1 Semiconductor light emitting device having narrow radiation spectrum Public/Granted day:2006-04-06
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