Invention Grant
- Patent Title: Semiconductor device, electro-optical device, electronic apparatus, method for manufacturing semiconductor device, method for manufacturing electro-optical device, and method for manufacturing electronic apparatus
- Patent Title (中): 半导体装置，电光装置，电子装置，半导体装置的制造方法，电光装置的制造方法以及电子装置的制造方法
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Application No.: US12332582Application Date: 2008-12-11
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Publication No.: US07880203B2Publication Date: 2011-02-01
- Inventor: Mitsutoshi Miyasaka , Atsushi Miyazaki
- Applicant: Mitsutoshi Miyasaka , Atsushi Miyazaki
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2008-028864 20080208
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
The invention provides, as an aspect thereof, a semiconductor device that includes: a substrate; an underlying insulation film that is formed over the substrate; and a plurality of thin-film transistors that is formed over the underlying insulation film, each of the plurality of thin-film transistors having a semiconductor film, wherein the underlying insulation film is formed in separate areas each of which includes, when viewed in plan, at least one of the plurality of semiconductor films.
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