Invention Grant
US07880211B2 Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same
有权
防熔丝及其形成方法相同，非易失存储器件的单元电池相同
- Patent Title: Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same
- Patent Title (中): 防熔丝及其形成方法相同，非易失存储器件的单元电池相同
-
Application No.: US12379094Application Date: 2009-02-12
-
Publication No.: US07880211B2Publication Date: 2011-02-01
- Inventor: Chang-Hee Shin , Ki-Seok Cho , Seong-Do Jeon
- Applicant: Chang-Hee Shin , Ki-Seok Cho , Seong-Do Jeon
- Applicant Address: KR
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR
- Agency: NSIP Law
- Priority: KR10-2008-0015153 20080220
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
An anti-fuse includes a gate dielectric layer formed over a substrate, a gate electrode including a body portion and a plurality of protruding portions extending from the body portion, wherein the body portion and the protruding portions are formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the protruding portions.
Public/Granted literature
- US20090206381A1 Anti-fuse and method for forming the same, unit cell of nonvolatile memory device with the same Public/Granted day:2009-08-20
Information query
IPC分类:
