Invention Grant
US07880212B2 Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer
有权
用这种介电中间层制造电介质中间层和储能电容器的方法
- Patent Title: Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer
- Patent Title (中): 用这种介电中间层制造电介质中间层和储能电容器的方法
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Application No.: US12198005Application Date: 2008-08-25
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Publication No.: US07880212B2Publication Date: 2011-02-01
- Inventor: Bernd Hintze , Henry Bernhardt , Frank Bernhardt
- Applicant: Bernd Hintze , Henry Bernhardt , Frank Bernhardt
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer and a second metal oxide layer formed by completely oxidizing a metal nitride layer to higher valency.
Public/Granted literature
- US20080316675A1 METHOD FOR PRODUCING A DIELECTRIC INTERLAYER AND STORAGE CAPACITOR WITH SUCH A DIELECTRIC INTERLAYER Public/Granted day:2008-12-25
Information query
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