Invention Grant
US07880220B2 Non-volatile memory device and fabrication method of non-volatile memory device and memory apparatus including non-volatile memory device
有权
非易失性存储器件和非易失性存储器件的制造方法以及包括非易失性存储器件的存储器件
- Patent Title: Non-volatile memory device and fabrication method of non-volatile memory device and memory apparatus including non-volatile memory device
- Patent Title (中): 非易失性存储器件和非易失性存储器件的制造方法以及包括非易失性存储器件的存储器件
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Application No.: US11777613Application Date: 2007-07-13
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Publication No.: US07880220B2Publication Date: 2011-02-01
- Inventor: Byoung Deog Choi
- Applicant: Byoung Deog Choi
- Applicant Address: KR Yongin
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: Stein McEwen, LLP
- Priority: KR10-2006-0114585 20061120
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and realizing improved blocking function with an oxide film that is thinner by forming a first oxide film and a second oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma. A fabricating method and a memory apparatus of the non-volatile memory device are also discussed.
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