Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US11927375Application Date: 2007-10-29
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Publication No.: US07880225B2Publication Date: 2011-02-01
- Inventor: Hitoshi Matsuura , Yoshito Nakazawa
- Applicant: Hitoshi Matsuura , Yoshito Nakazawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-295435 20061031
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A trench is formed so as to reach a p−-type epitaxial layer from an upper surface of a source region. A gate electrode is formed so as to bury the trench. Each of body contact trenches is formed away from the gate electrode. A body contact region is formed at the bottom of the body contact trench. An n-type semiconductor region that is a feature of the present invention is formed in a layer below each body contact region. The impurity concentration of the n-type semiconductor region is higher than a channel forming area and lower than the body contact region.
Public/Granted literature
- US20080099836A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2008-05-01
Information query
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