Invention Grant
US07880243B2 Simple low power circuit structure with metal gate and high-k dielectric
有权
简单的低功耗电路结构，具有金属栅极和高k电介质
- Patent Title: Simple low power circuit structure with metal gate and high-k dielectric
- Patent Title (中): 简单的低功耗电路结构，具有金属栅极和高k电介质
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Application No.: US11835310Application Date: 2007-08-07
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Publication No.: US07880243B2Publication Date: 2011-02-01
- Inventor: Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri
- Applicant: Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent George Sai-Halasz; Louis J. Percello
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/70 ; H01L27/088 ; H01L21/02 ; H01L23/58
Abstract:
FET device structures are disclosed with the PFET and NFET devices having high-k dielectric gate insulators and metal containing gates. The metal layers of the gates in both the NFET and PFET devices have been fabricated from a single common metal layer. Due to the single common metal, device fabrication is simplified, requiring a reduced number of masks. Also, as a further consequence of using a single layer of metal for the gates of both type of devices, the terminal electrodes of NFETs and PFETs can be butted to each other in direct physical contact. Device thresholds are adjusted by the choice of the common metal material and oxygen exposure of the high-k dielectric. Threshold values are aimed for low power consumption device operation.
Public/Granted literature
- US20090039434A1 Simple Low Power Circuit Structure with Metal Gate and High-k Dielectric Public/Granted day:2009-02-12
Information query
IPC分类:
