A solid-state image capturing device is provided. In the solid-state image capturing device, at least any of openings of electrode wiring layers, color filters and microlenses are provided on a light incident side above light receiving elements as a light receiving region in which the plurality of light receiving elements are disposed on a semiconductor substrate or a semiconductor region provided on a substrate, wherein a shift amount of at least any of the openings of the electrode wiring layers, the color filters and the microlenses in relation to the light receiving elements or in relation to a standard position where a light flux is desired to pass through is calculated by Snell's law based on an incident angle θ0 of a light flux entering the light receiving region to a surface of the solid-state image capturing device.