Invention Grant
- Patent Title: Pixel cell having a grated interface
- Patent Title (中): 像素单元格具有格栅界面
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Application No.: US10893276Application Date: 2004-07-19
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Publication No.: US07880255B2Publication Date: 2011-02-01
- Inventor: William J. Baggenstoss
- Applicant: William J. Baggenstoss
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/0352
Abstract:
A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface.
Public/Granted literature
- US20060011955A1 Pixel cell having a grated interface Public/Granted day:2006-01-19
Information query
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