Invention Grant
US07880257B2 Image sensors including photoelectric converting units having multiple impurity regions
有权
图像传感器包括具有多个杂质区域的光电转换单元
- Patent Title: Image sensors including photoelectric converting units having multiple impurity regions
- Patent Title (中): 图像传感器包括具有多个杂质区域的光电转换单元
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Application No.: US12699525Application Date: 2010-02-03
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Publication No.: US07880257B2Publication Date: 2011-02-01
- Inventor: Yun-ki Lee
- Applicant: Yun-ki Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0093286 20070913
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00
Abstract:
An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.
Public/Granted literature
- US20100140731A1 IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS Public/Granted day:2010-06-10
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