Invention Grant
US07880267B2 Buried decoupling capacitors, devices and systems including same, and methods of fabrication
有权
掩埋去耦电容器，包括其的器件和系统以及制造方法
- Patent Title: Buried decoupling capacitors, devices and systems including same, and methods of fabrication
- Patent Title (中): 掩埋去耦电容器，包括其的器件和系统以及制造方法
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Application No.: US11510945Application Date: 2006-08-28
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Publication No.: US07880267B2Publication Date: 2011-02-01
- Inventor: Badih El-Kareh
- Applicant: Badih El-Kareh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A buried decoupling capacitor apparatus and method are provided. According to various embodiments, a buried decoupling capacitor apparatus includes a semiconductor-on-insulator substrate having a buried insulator region and top semiconductor region on the buried insulator region. The apparatus embodiment also includes a first capacitor plate having a doped region in the top semiconductor region in the semiconductor-on-insulator substrate. The apparatus embodiment further includes a dielectric material on the first capacitor plate, and a second capacitor plate on the dielectric material. According to various embodiments, the first capacitor plate, the dielectric material and the second capacitor plate form a decoupling capacitor for use in an integrated circuit.
Public/Granted literature
- US20080048231A1 Buried decoupling capacitors, devices and systems including same, and methods of fabrication Public/Granted day:2008-02-28
Information query
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