An integrated circuit including a capacitor and a method of fabricating an integrated circuit. The capacitor has a first electrode. A plurality of conductive lines is separated from each other and is configured to be held at a potential being the same for all conductive lines. A second electrode encloses individual ones of the conductive lines at a top side and at least one lateral side and is separated from the first electrode by a dielectric layer. The second electrode includes a polycrystalline semiconductor material, a metal or a metal-semiconductor compound.