Invention Grant
US07880271B2 Semiconductor device with emitter contact holes in a first layer not overlaid by emitter through holes in a second layer
有权
在第一层中具有发射极接触孔的半导体器件不由第二层中的发射极通孔覆盖
- Patent Title: Semiconductor device with emitter contact holes in a first layer not overlaid by emitter through holes in a second layer
- Patent Title (中): 在第一层中具有发射极接触孔的半导体器件不由第二层中的发射极通孔覆盖
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Application No.: US12547623Application Date: 2009-08-26
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Publication No.: US07880271B2Publication Date: 2011-02-01
- Inventor: Kazuya Takahashi
- Applicant: Kazuya Takahashi
- Applicant Address: JP Osaka JP Gunma
- Assignee: Sanyo Electric Co., Ltd,Sanyo Semiconductor Co., Ltd
- Current Assignee: Sanyo Electric Co., Ltd,Sanyo Semiconductor Co., Ltd
- Current Assignee Address: JP Osaka JP Gunma
- Agency: Morrison & Foerster LLP
- Priority: JP2008-217105 20080826
- Main IPC: H01L29/73
- IPC: H01L29/73

Abstract:
Emitter contact holes formed under emitter electrodes in a first layer and emitter through holes formed thereon are arranged so as not to overlap each other, and, for each emitter electrode, the multiple emitter contact holes and the multiple emitter through holes are provided so as to be separated from each other. Thereby, the top surface of an emitter electrode in a second layer is influenced by at most only a level difference of each emitter through hole formed in an insulating film having a larger thickness, and thus the flatness of the top surface of the emitter electrode in the second layer is improved. Accordingly, fixation failure of a metal plate can be avoided.
Public/Granted literature
- US20100052102A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-03-04
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