Invention Grant
- Patent Title: Method of manufacturing semiconductor device from semiconductor wafer
- Patent Title (中): 从半导体晶片制造半导体器件的方法
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Application No.: US11543083Application Date: 2006-10-05
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Publication No.: US07880273B2Publication Date: 2011-02-01
- Inventor: Kenichi Sakamoto
- Applicant: Kenichi Sakamoto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-294926 20051007
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
In a method of manufacturing a semiconductor device, a semiconductor wafer is provided. The wafer has semiconductor chip regions, a scribing line region and a predetermined region. A passivation layer is formed on the wafer. A photoresist film is formed on the passivation layer. A first pattern in a reticle is transferred to a first portion of the photoresist film above the scribing line region. The first pattern is transferred to a second portion of the photoresist film above the predetermined region. The photoresist film is developed. The passivation layer is etched using the photoresist film as a mask. The wafer is diced along the scribing line region to form semiconductor chips and a piece. Each of the semiconductor chips corresponds to each of chip regions. The piece group includes a piece which corresponds to the predetermined region.
Public/Granted literature
- US20070082298A1 Method of manufacturing semiconductor device from semiconductor wafer Public/Granted day:2007-04-12
Information query
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