Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11831515Application Date: 2007-07-31
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Publication No.: US07880292B2Publication Date: 2011-02-01
- Inventor: Jae-Won Han
- Applicant: Jae-Won Han
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2006-0080135 20060823
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.
Public/Granted literature
- US20080048345A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2008-02-28
Information query
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