Invention Grant
US07880392B2 Plasma producing method and apparatus as well as plasma processing apparatus
有权
等离子体制造方法和装置以及等离子体处理装置
- Patent Title: Plasma producing method and apparatus as well as plasma processing apparatus
- Patent Title (中): 等离子体制造方法和装置以及等离子体处理装置
-
Application No.: US11586583Application Date: 2006-10-26
-
Publication No.: US07880392B2Publication Date: 2011-02-01
- Inventor: Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
- Applicant: Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
- Applicant Address: JP Kyoto JP Kyoto
- Assignee: Nissin Electric Co., Ltd.,EMD Corporation
- Current Assignee: Nissin Electric Co., Ltd.,EMD Corporation
- Current Assignee Address: JP Kyoto JP Kyoto
- Agency: Cheng Law Group, PLLC
- Priority: JP2005-313594 20051028; JP2006-178858 20060629
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
Public/Granted literature
- US20070095287A1 Plasma producing method and apparatus as well as plasma processing apparatus Public/Granted day:2007-05-03
Information query
IPC分类: