Invention Grant
US07880392B2 Plasma producing method and apparatus as well as plasma processing apparatus 有权
等离子体制造方法和装置以及等离子体处理装置

Plasma producing method and apparatus as well as plasma processing apparatus
Abstract:
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
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