Invention Grant
US07880459B2 Circuits and methods to produce a VPTAT and/or a bandgap voltage
有权
产生VPTAT和/或带隙电压的电路和方法
- Patent Title: Circuits and methods to produce a VPTAT and/or a bandgap voltage
- Patent Title (中): 产生VPTAT和/或带隙电压的电路和方法
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Application No.: US12111796Application Date: 2008-04-29
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Publication No.: US07880459B2Publication Date: 2011-02-01
- Inventor: Barry Harvey
- Applicant: Barry Harvey
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fiesler Meyer LLP
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/20

Abstract:
Provided herein are circuits and methods to generate a voltage proportional to absolute temperature (VPTAT) and/or a bandgap voltage output (VGO). A circuit includes a group of X transistors. A first subgroup of the X transistors are used to produce a first base-emitter voltage (VBE1). A second subgroup of the X transistors are used to produce a second base-emitter voltage (VBE2). The VPTAT can be produced by determining a difference between VBE1 and VBE2. Which of the X transistors are in the first subgroup and used to produce the first base-emitter voltage (VBE1), and/or which of the X transistors are in the second subgroup and used to produce the second base-emitter voltage (VBE2), change over time. Additionally, a circuit portion can be used to generates a voltage complimentary to absolute temperature (VCTAT) using at least one of the X transistors. The VPTAT and the VCTAT can be added to produce the VGO.
Public/Granted literature
- US20080278137A1 CIRCUITS AND METHODS TO PRODUCE A VPTAT AND/OR A BANDGAP VOLTAGE Public/Granted day:2008-11-13
Information query
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