Invention Grant
US07880535B2 Semiconductor device, control method of semiconductor device, and control information generating method for semiconductor device 有权
半导体装置,半导体装置的控制方法以及半导体装置的控制信息生成方法

  • Patent Title: Semiconductor device, control method of semiconductor device, and control information generating method for semiconductor device
  • Patent Title (中): 半导体装置,半导体装置的控制方法以及半导体装置的控制信息生成方法
  • Application No.: US12188449
    Application Date: 2008-08-08
  • Publication No.: US07880535B2
    Publication Date: 2011-02-01
  • Inventor: Yoshio Inoue
  • Applicant: Yoshio Inoue
  • Applicant Address: JP Yokohama
  • Assignee: Fujitsu Semiconductor Limited
  • Current Assignee: Fujitsu Semiconductor Limited
  • Current Assignee Address: JP Yokohama
  • Agency: Fujitsu Patent Center
  • Priority: JP2007-253575 20070928
  • Main IPC: G05F1/10
  • IPC: G05F1/10
Semiconductor device, control method of semiconductor device, and control information generating method for semiconductor device
Abstract:
A semiconductor device 2 has a plurality of elements. It also has an F-V table storing unit for low voltage threshold cells 31 for storing an F-V table TB11 of an oscillation frequency f1 relying on the plurality of elements and a power supply voltage EV to be supplied to the plurality of elements. It has a process sensor block 12 having at least one of the plurality of elements, for monitoring the oscillation frequency f1 relying on at least one element. It further has a selector 33 for setting the power supply voltage EV associated with the oscillation frequency f1, as the supply voltage to be supplied to the semiconductor device 2 by selecting according to the F-V table TB11. The F-V table TB11 is obtained by mutually relating the combinations of random number models ξn between an F-ξ table TB20 and an ξ-V table TB30.
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