Invention Grant
- Patent Title: Overlay electromagnetic bandgap (EBG) structure and method of manufacturing the same
- Patent Title (中): 覆盖电磁带隙(EBG)结构及其制造方法
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Application No.: US12034260Application Date: 2008-02-20
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Publication No.: US07880567B2Publication Date: 2011-02-01
- Inventor: Cheol-gyu Hwang , Sung-tae Choi , Jung-han Choi , Young-hwan Kim , Dong-hyun Lee
- Applicant: Cheol-gyu Hwang , Sung-tae Choi , Jung-han Choi , Young-hwan Kim , Dong-hyun Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0102266 20071010
- Main IPC: H01P1/203
- IPC: H01P1/203

Abstract:
Provided is an electromagnetic bandgap (EBG) structure, and particularly, an overlay EBG structure in which a plurality of vias and a plurality of plates are formed at intervals on a central signal line in such a manner that the vias and plates extend vertically from a substrate in order to reduce leakage loss of an electromagnetic wave through the substrate. Therefore, it is possible to prevent an electromagnetic wave passing through a transmission line from being lost through the substrate, to obtain desired frequency characteristics by adjusting the dimensions of the vias and plates, and to manufacture the overlay EBG structure using an existing CMOS process without having to perform any additional process.
Public/Granted literature
- US20090096552A1 OVERLAY ELECTROMAGNETIC BANDGAP (EBG) STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-04-16
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