Invention Grant
- Patent Title: Thermistor having doped and undoped layers of material
- Patent Title (中): 具有掺杂和未掺杂材料层的热敏电阻
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Application No.: US11648919Application Date: 2007-01-03
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Publication No.: US07880580B2Publication Date: 2011-02-01
- Inventor: Aaron J. Knobloch , Jeffrey B. Fortin , David J. Geer
- Applicant: Aaron J. Knobloch , Jeffrey B. Fortin , David J. Geer
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Joseph J. Christian
- Main IPC: H01C7/10
- IPC: H01C7/10
Abstract:
According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.
Public/Granted literature
- US20070126548A1 Thermistor having doped and undoped layers of material Public/Granted day:2007-06-07
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