Invention Grant
- Patent Title: MOS image sensor
- Patent Title (中): MOS图像传感器
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Application No.: US11519087Application Date: 2006-09-12
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Publication No.: US07880787B2Publication Date: 2011-02-01
- Inventor: Makoto Shizuishi
- Applicant: Makoto Shizuishi
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP.
- Priority: JPP.2005-267152 20050914; JPP.2005-267153 20050914
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H01L31/062 ; H01L27/00
Abstract:
A MOS image sensor comprises: a semiconductor substrate that has a surface including an image area; a plurality of photoelectric conversion elements arranged on the image area; and lines formed over the image area in a manner avoiding the photoelectric conversion elements and connected to a signal-read circuit provided corresponding to each of the photoelectric conversion elements, wherein a predetermined one of the lines is formed by a conductive polysilicon film.
Public/Granted literature
- US20070064133A1 MOS image sensor Public/Granted day:2007-03-22
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