Invention Grant
US07881025B2 Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
具有介于第一和第二非磁性金属层之间的半导体层的间隔层的磁阻效应器件和用于可用于硬盘系统中的头部万向节组件中的薄膜磁头的功函数控制层

Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system
Abstract:
The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
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