Invention Grant
US07881101B2 Nonvolatile memory devices that include a write circuit that writes data over multiple write periods using pulses whose peaks do not coincide with each other
有权
包括写入电路的非易失性存储器件，该写入电路使用峰值彼此不一致的脉冲在多个写入周期上写入数据
- Patent Title: Nonvolatile memory devices that include a write circuit that writes data over multiple write periods using pulses whose peaks do not coincide with each other
- Patent Title (中): 包括写入电路的非易失性存储器件，该写入电路使用峰值彼此不一致的脉冲在多个写入周期上写入数据
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Application No.: US12179321Application Date: 2008-07-24
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Publication No.: US07881101B2Publication Date: 2011-02-01
- Inventor: Young-Ran Kim , Ki-Won Lim , Byung-Gil Choi , Ki-Sung Kim
- Applicant: Young-Ran Kim , Ki-Won Lim , Byung-Gil Choi , Ki-Sung Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0076510 20070730
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Nonvolatile memory devices include a plurality of nonvolatile memory cells and a write circuit that is operable to write data to the nonvolatile memory cells over a plurality of consecutive division write periods by generating a plurality of write pulses whose peaks do not coincide with one another to the nonvolatile memory cells.
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