Invention Grant
- Patent Title: Magnetic memory with separate read and write paths
- Patent Title (中): 具有独立读写路径的磁记忆体
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Application No.: US12326186Application Date: 2008-12-02
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Publication No.: US07881104B2Publication Date: 2011-02-01
- Inventor: Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
- Applicant: Yong Lu , Hongyue Liu , Zheng Gao , Insik Jin , Dimitar V. Dimitrov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.
Public/Granted literature
- US20100032778A1 MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS Public/Granted day:2010-02-11
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