Invention Grant
- Patent Title: High voltage generator circuit and flash memory device including the same
- Patent Title (中): 高压发生器电路和闪存器件包括相同的
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Application No.: US12114335Application Date: 2008-05-02
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Publication No.: US07881117B2Publication Date: 2011-02-01
- Inventor: Tae-Seong Kim
- Applicant: Tae-Seong Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR2007-43155 20070503
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06
Abstract:
A high voltage generator circuit includes a high voltage generator configured to generate a high voltage; and a control circuit configured to control the high voltage generator so as to vary the high voltage in response to variations of a peripheral temperature.
Public/Granted literature
- US20080273383A1 HIGH VOLTAGE GENERATOR CIRCUIT AND FLASH MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2008-11-06
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