Invention Grant
- Patent Title: Sense transistor protection for memory programming
- Patent Title (中): 感应晶体管保护用于存储器编程
-
Application No.: US12154585Application Date: 2008-05-22
-
Publication No.: US07881118B2Publication Date: 2011-02-01
- Inventor: Fredrick Jenne
- Applicant: Fredrick Jenne
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A method and apparatus for protecting a sense transistor in a sense amplifier during memory programming and erase operations, and for increasing the coupling efficiency of the memory device during the programming and erase operations may include floating a first terminal and a second terminal of the sense transistor while programming and erasing the memory device.
Public/Granted literature
- US20080298132A1 Sense transistor protection for memory programming Public/Granted day:2008-12-04
Information query
