Invention Grant
US07881119B2 Current sensing circuit and semiconductor memory device including the same
有权
电流检测电路和包括其的半导体存储器件
- Patent Title: Current sensing circuit and semiconductor memory device including the same
- Patent Title (中): 电流检测电路和包括其的半导体存储器件
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Application No.: US12385958Application Date: 2009-04-24
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Publication No.: US07881119B2Publication Date: 2011-02-01
- Inventor: Nobuyuki Fukushima
- Applicant: Nobuyuki Fukushima
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-116148 20080425
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
To provide a current sensing circuit that detects a difference between a cell current and a reference current. The current sensing circuit includes: current mirror circuits of which the input terminal is connected with a reference current source; a differential amplifier of which the one input terminal is supplied with a potential of an electrical connection point between an output terminal of the current mirror circuit and a memory cell and of which the other input terminal is supplied with a reference potential; and an equalizing circuit that short-circuits the both input terminals of the differential amplifier in response to an equalizing signal. Thereby, the both input terminals can be kept at the same potential immediately before a sensing operation starts, and thus, even when the cell current is weak, a highly sensitive sensing operation can be performed at high speed.
Public/Granted literature
- US20090268538A1 Current sensing circuit and semiconductor memory device including the same Public/Granted day:2009-10-29
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