Invention Grant
- Patent Title: Semiconductor memory device having write data through function
- Patent Title (中): 具有通过功能写入数据的半导体存储器件
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Application No.: US11976720Application Date: 2007-10-26
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Publication No.: US07881130B2Publication Date: 2011-02-01
- Inventor: Toshiro Koga
- Applicant: Toshiro Koga
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-292531 20061027
- Main IPC: G11C7/22
- IPC: G11C7/22

Abstract:
A semiconductor memory device includes a switch that turns on or off connection between a write data line pair which is an output of a write buffer and read data line pair. For a Write Data Through function, the switch is turned on in response to an activated one-shot pulse and a sense amplifier activation signal, thereby approximately equalizing data hold time tOHW in the Write Data Through function and data hold time tOHR in a read operation.
Public/Granted literature
- US20080101136A1 Semiconductor memory device having write data through function Public/Granted day:2008-05-01
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