Invention Grant
US07881136B2 Test mode signal generator for semiconductor memory and method of generating test mode signals
有权
用于半导体存储器的测试模式信号发生器和产生测试模式信号的方法
- Patent Title: Test mode signal generator for semiconductor memory and method of generating test mode signals
- Patent Title (中): 用于半导体存储器的测试模式信号发生器和产生测试模式信号的方法
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Application No.: US12345889Application Date: 2008-12-30
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Publication No.: US07881136B2Publication Date: 2011-02-01
- Inventor: Ki Up Kim
- Applicant: Ki Up Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0092208 20080919
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A test mode signal generator for a semiconductor memory device includes a test mode entry control unit that receives test entry mode setting addresses inputted in response to a test mode register set signal. The test mode entry control unit outputs a plurality of test entry mode signals and a test mode set signal according to the test entry mode setting addresses. A latch unit latches test address decoding signals in response to the test mode set signal, and outputs test mode signals by allowing the latched test address decoding signals to be controlled by the respective test entry mode signals. A test mode signal is generated for each test entry mode, so that the number of test modes is increased without increasing the number of addresses for supporting test modes.
Public/Granted literature
- US20100074031A1 TEST MODE SIGNAL GENERATOR FOR SEMICONDUCTOR MEMORY AND METHOD OF GENERATING TEST MODE SIGNALS Public/Granted day:2010-03-25
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