Invention Grant
- Patent Title: Memory circuit with sense amplifier
- Patent Title (中): 存储电路带有读出放大器
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Application No.: US12373184Application Date: 2006-07-10
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Publication No.: US07881138B2Publication Date: 2011-02-01
- Inventor: Brad Garni , Thomas Andre , Jean Lasseuguette
- Applicant: Brad Garni , Thomas Andre , Jean Lasseuguette
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.
- International Application: PCT/IB2006/054095 WO 20060710
- International Announcement: WO2008/007174 WO 20080117
- Main IPC: G11C7/06
- IPC: G11C7/06

Abstract:
A memory has a pre-amplifier for generating an output signal and a reference signal. The memory includes a comparator for comparing the output signal to the reference signal. The comparator includes a bias stage for generating a bias signal, wherein the bias signal is an average of the output signal and the reference signal. The comparator further includes a first output stage for generating a first comparator output signal by comparing the output signal and the bias signal. The comparator further includes a second output stage for generating a second comparator output signal by comparing the reference signal and the bias signal.
Public/Granted literature
- US20090290443A1 MEMORY CIRCUIT WITH SENSE AMPLIFIER Public/Granted day:2009-11-26
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