Invention Grant
US07881139B2 Semiconductor memory device with temperature sensing device and operation thereof
有权
具有温度检测装置的半导体存储器件及其操作
- Patent Title: Semiconductor memory device with temperature sensing device and operation thereof
- Patent Title (中): 具有温度检测装置的半导体存储器件及其操作
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Application No.: US12463838Application Date: 2009-05-11
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Publication No.: US07881139B2Publication Date: 2011-02-01
- Inventor: Kyung-Hoon Kim , Patrick B. Moran
- Applicant: Kyung-Hoon Kim , Patrick B. Moran
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2006-0030289 20060403; KR10-2006-0049134 20060531
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/00

Abstract:
A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature sensing unit senses temperatures in response to a driving signal. The storage unit stores output signals of the temperature sensing unit and outputs temperature values. The initializing unit initializes the storage unit after a predetermined time from an activation of the driving signal. A driving method includes driving the thermosensor in response to the driving signal, requesting a re-driving after a predetermined time from the activation of the driving signal, and re-driving the thermosensor in response to the driving signal input again.
Public/Granted literature
- US20090245325A1 SEMICONDUCTOR MEMORY DEVICE WITH TEMPERATURE SENSING DEVICE AND OPERATION THEREOF Public/Granted day:2009-10-01
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