Invention Grant
US07881150B2 Circuit providing load isolation and memory domain translation for memory module
有权
电路为存储器模块提供负载隔离和存储器域转换
- Patent Title: Circuit providing load isolation and memory domain translation for memory module
- Patent Title (中): 电路为存储器模块提供负载隔离和存储器域转换
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Application No.: US12629827Application Date: 2009-12-02
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Publication No.: US07881150B2Publication Date: 2011-02-01
- Inventor: Jeffrey C. Solomon , Jayesh R. Bhakta
- Applicant: Jeffrey C. Solomon , Jayesh R. Bhakta
- Applicant Address: US CA Irvine
- Assignee: Netlist, Inc.
- Current Assignee: Netlist, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G11C8/16
- IPC: G11C8/16

Abstract:
A circuit is configured to be mounted on a memory module so as to be electrically coupled to a plurality of double-data-rate (DDR) memory devices arranged in one or more ranks on the memory module. The circuit includes a logic element, a register, and a phase-lock loop device. The circuit is configurable to respond to a set of input signals from a computer system to selectively isolate one or more loads of the plurality of DDR memory devices from the computer system and to translate between a system memory domain of the computer system and a physical memory domain of the plurality of DDR memory devices.
Public/Granted literature
- US20100128507A1 CIRCUIT PROVIDING LOAD ISOLATION AND MEMORY DOMAIN TRANSLATION FOR MEMORY MODULE Public/Granted day:2010-05-27
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