Invention Grant
- Patent Title: Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method
- Patent Title (中): 垂直腔表面发射半导体激光器件,光传输模块,光传输器件和光开关方法
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Application No.: US12153152Application Date: 2008-05-14
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Publication No.: US07881357B2Publication Date: 2011-02-01
- Inventor: Takashi Takahashi
- Applicant: Takashi Takahashi
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2005-026469 20050202; JP2005-062294 20050307
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.
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