Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US11868027Application Date: 2007-10-05
-
Publication No.: US07881693B2Publication Date: 2011-02-01
- Inventor: Yoshiyuki Kurokawa
- Applicant: Yoshiyuki Kurokawa
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-282084 20061017
- Main IPC: H04B1/16
- IPC: H04B1/16

Abstract:
In an RF tag, a mask ROM or a flash memory is used for storing data such as an ID number. Although the mask ROM can be realized at a low price, rewriting is not possible. In addition, in the flash memory, although electric rewriting is possible, production cost increases. Accordingly, it is difficult to provide an RF tag by which data rewriting is possible at a low price. An RF tag is provided with a power supply circuit having a function to generate a power supply voltage from a weak radio signal and a memory which can hold data stored in a data holding portion by the power supply voltage. With the above structure, a high-performance RF tag capable of rewriting data such as an ID number after production can be provided at a low price.
Public/Granted literature
- US20080214132A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-09-04
Information query