Invention Grant
US07882376B2 Power control for a core circuit area of a semiconductor integrated circuit device
有权
半导体集成电路器件的核心电路区域的功率控制
- Patent Title: Power control for a core circuit area of a semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件的核心电路区域的功率控制
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Application No.: US11782006Application Date: 2007-07-24
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Publication No.: US07882376B2Publication Date: 2011-02-01
- Inventor: Kazumasa Ozawa
- Applicant: Kazumasa Ozawa
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, PLLC
- Priority: JP2006-275563 20061006
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F1/26 ; G06F1/32 ; B23K11/24

Abstract:
The present invention provides an LSI which comprises first circuit areas (e.g., an I/O area and a VBAT area) in which power is always held ON, a second circuit area (e.g., a CORE area) capable of ON/OFF-switching of the power, a power control circuit which is provided within the corresponding first circuit area and outputs a control signal for performing power control on the second circuit area, and a reset signal detection circuit which is provided within the corresponding first circuit area and detects an internal standby reset signal or an external standby reset signal to control the operation of the power control circuit.
Public/Granted literature
- US20080086650A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2008-04-10
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