Invention Grant
US07882780B2 System and method for patterning both sides of a substrate utilizing imprint lithography
有权
使用压印光刻对基板的两侧进行图案化的系统和方法
- Patent Title: System and method for patterning both sides of a substrate utilizing imprint lithography
- Patent Title (中): 使用压印光刻对基板的两侧进行图案化的系统和方法
-
Application No.: US12076346Application Date: 2008-03-17
-
Publication No.: US07882780B2Publication Date: 2011-02-08
- Inventor: Harry Sewell
- Applicant: Harry Sewell
- Applicant Address: NL Veldhoven
- Assignee: ASML Holding N.V.
- Current Assignee: ASML Holding N.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: B41F1/00
- IPC: B41F1/00

Abstract:
Provided are methods and systems for imprinting a pattern formed on surfaces of an imprint mask onto a double-sided substrate. The method includes deforming the surfaces of the first and second imprint stamps to produce respective first and second deformed surfaces, each having an arc therein. A pressure is applied to bring the deformed first and second surfaces into intimate contact with the first and second substrate surfaces, respectively. The applied pressure substantially flattens the deformed surfaces. To separate the two surfaces, the applied pressure is released. The method also includes transporting a substrate having first and second patterning surfaces and a shaped edge using a carrier having a holding portion that holds the shaped edge of the substrate, the holding surface having a shape that is complementary to the shaped edge of the substrate, such that the patterning surfaces remain untouched by the carrier.
Public/Granted literature
- US20080163769A1 System and method for patterning both sides of a substrate utilizing imprint lithography Public/Granted day:2008-07-10
Information query