Invention Grant
- Patent Title: Pulsed high-voltage silicon quantum dot fluorescent lamp
- Patent Title (中): 脉冲高压硅量子点荧光灯
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Application No.: US11898344Application Date: 2007-09-11
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Publication No.: US07883387B2Publication Date: 2011-02-08
- Inventor: Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
- Applicant: Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Main IPC: H01J9/00
- IPC: H01J9/00 ; B05D5/06 ; B05D5/12

Abstract:
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
Public/Granted literature
- US20100216266A1 Pulsed high-voltage silicon quantum dot fluorescent lamp Public/Granted day:2010-08-26
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