Invention Grant
- Patent Title: RF supply system and plasma processing apparatus
- Patent Title (中): RF供电系统和等离子体处理装置
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Application No.: US11262747Application Date: 2005-11-01
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Publication No.: US07883600B2Publication Date: 2011-02-08
- Inventor: Kenji Sato
- Applicant: Kenji Sato
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-319634 20041102
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; C23C14/00

Abstract:
An RF supply system is to be connected to an RF electrode disposed outside or inside a process chamber to assist a plasma process performed in the process chamber. This system includes an RF power supply, a matching unit, and an impedance converter. The RF power supply is configured to supply an RF power for plasma generation to the electrode through a transmission path. The matching unit is disposed on the transmission path between the RF power supply and the electrode, and configured to match a load impedance viewing from the RF power supply with an impedance of the RF power supply side. The impedance converter is disposed on the transmission path between the matching unit and the electrode, and configured to convert a load impedance viewing from the matching unit to an impedance higher than an actual impedance on the electrode side.
Public/Granted literature
- US20060090854A1 RF supply system and plasma processing apparatus Public/Granted day:2006-05-04
Information query
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