Invention Grant
US07883601B2 Apparatus and method for controlling relative particle speeds in a plasma
有权
用于控制等离子体中的相对粒子速度的装置和方法
- Patent Title: Apparatus and method for controlling relative particle speeds in a plasma
- Patent Title (中): 用于控制等离子体中的相对粒子速度的装置和方法
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Application No.: US11624838Application Date: 2007-01-19
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Publication No.: US07883601B2Publication Date: 2011-02-08
- Inventor: Shih Ming Chang , Chi-Lun Lu
- Applicant: Shih Ming Chang , Chi-Lun Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H05B31/26
Abstract:
An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
Public/Granted literature
- US20080099439A1 Apparatus and Method For Controlling Relative Particle Speeds In A Plasma Public/Granted day:2008-05-01
Information query
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