Invention Grant
- Patent Title: Photomask and method for manufacturing a semiconductor device using the photomask
- Patent Title (中): 光掩模和使用光掩模制造半导体器件的方法
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Application No.: US12025250Application Date: 2008-02-04
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Publication No.: US07883823B2Publication Date: 2011-02-08
- Inventor: Naoyuki Ishiwata
- Applicant: Naoyuki Ishiwata
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-023642 20070202
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F9/00

Abstract:
A method of manufacturing a semiconductor device that includes: a first exposing step using a photomask in a first area of a semiconductor substrate; and a second exposing step using the photomask in a second area adjacent to the first area of the semiconductor substrate. The photomask includes a first transmitting pattern having a ring shape that is missing a part, and a supplemental second transmitting pattern having a shape corresponding to the missing part of the first transmitting pattern, so that a closed loop pattern is exposed by the first exposing step and the second exposing step on the semiconductor substrate.
Public/Granted literature
- US20080187843A1 PHOTOMASK AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE PHOTOMASK Public/Granted day:2008-08-07
Information query
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