Invention Grant
- Patent Title: Semiconductor device with bonding pad
- Patent Title (中): 具有焊盘的半导体器件
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Application No.: US12354171Application Date: 2009-01-15
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Publication No.: US07883917B2Publication Date: 2011-02-08
- Inventor: Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
- Applicant: Ming-Chyi Liu , Yuan-Hung Liu , Gwo-Yuh Shiau , Yuan-Chih Hsieh , Chi-Hsin Lo , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.
Public/Granted literature
- US20090124073A1 SEMICONDUCTOR DEVICE WITH BONDING PAD Public/Granted day:2009-05-14
Information query
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